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Ultra-shallow dopant
laser annealing | LA
Ultra-shallow dopant laser annealing | LA
Application
Ultra-shallow dopant laser
annealing for BSI-CCD wafer
Product Features
  • The first in China, 8 inch mass production equipment

  • Precise energy density control

  • UV laser with low penetration depth

  • 1D top hat beam with large lengh/width ratio

  • Low dopant diffusion

ItemLA2518UV
Wafer Size6 inch, 8 inch
Junction depth≤50nm
Impurity peak diffusion depth≤5nm
RS non-uniformity<2% (WIW/WTW)