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SiC Laser Annealing | LA
SiC Laser Annealing | LA
Application
Ohmic contact preparation for SiC wafers
Product Features
  • First domestic green laser machine for mass production

  • High reliability and stability

  • Independently developed optical system with LIET technology

  • Green and UV laser wavelength options

Wafer Size6-inch,8-inch
Spot SizeX:100~500μmY:100~500μm
Max Laser Energy DensityGreen:10J/cm2UV:6J/cm2
Specific Contact Resistance~10-5Ω·cm2
Oxygen Control≤10ppm