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IGBT Laser Annealing | LA
IGBT Laser Annealing | LA
Application
Ion-activation for silicon IGBT
Product Features
  • High reliability and stability

  • Independently developed optical syste

  • Excellent thermal budget control

  • Handles ultra-thin Taiko wafers down to 50μm

Wafer Size6-inch, 8-inch, 12-inch
Laser Power60W*290W*260W*2+300W90W*2+300W
Laser Energy Density≥5J/cm2×2
Activation Efficiency≥95%@B+≥90%@P+
RS Non-UniformityWIW:≤1%@3sigmaWTW:≤1%@3sigma