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IGBT Laser Annealing | LA
IGBT Laser Annealing | LA
Application
Ion-activation for silicon IGBT
Product Features
  • High reliability and stability

  • Independly developped Optical system

  • Excellent thermal budget control

  • 50μm ultra-thin TaiKo wafer handling capability

ItemLA2540SLA2550SLA2540DLA2550D
Wafer size6 inch, 8 inch, 12 inch
Laser power60W*290W*260W*2+300W90W*2+300W
Laser energy density≥5J/cm2×2
Activation efficiency≥95%@B+≥90%@P+
RS non-uniformityWIW:≤1%@3sigmaWTW:≤1%@3sigma