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Laser Induced
Epitaxial Growth | LIEG
Laser Induced Epitaxial Growth | LIEG
Application
Laser-induced epitaxial growth
and void elimination for amorphous
silicon in high-aspect-ratio vias
Product Features
  • 12-inch wafer mass production innovatio

  • Multi-laser high precision modulation technology

  • Large area rectangular top-hat beam, high productivity

  • High energy density control precision

Laser Wavelength532nm
Wafer Size12 inch
Energy Density Accuracy5mJ/cm2
Beam Of Uniformity≤1%
Focal Depth Range5mm
Process EffectCrystallization and void elimination