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Laser Induced
Epitaxial Growth | LIEG
Laser Induced Epitaxial Growth | LIEG
Application
Laser-induced epitaxial growth
and void elimination for amorphous
silicon in high-aspect-ratio vias
Product Features

  • 12-inch wafer mass production innovatio

  • Multi-laser high precision modulation technology

  • Large area rectangular top-hat beam, high productivity

  • High energy density control precision

Laser Wavelength532nm
Wafer Size12 inch
Energy Density Accuracy5mJ/cm2
Beam Of Uniformity≤1%
Focal Depth Range5mm
Process EffectCrystallization and void elimination
PRODUCTS & APPLICATIONS
Wafer Fabrication
IGBT Laser Annealing | LA Laser Induced Crystallization | LIC Ultra-shallow dopant laser annealing | LA
SiC Laser Annealing | LA Laser Induced Epitaxial Growth | LIEG Wafer Laser Pulse | WLP
PRODUCTS & APPLICATIONS
Wafer Fabrication
IGBT Laser Annealing | LA SiC Laser Annealing | LA Laser Induced Crystallization | LIC Laser Induced Epitaxial Growth | LIEG Ultra-shallow dopant laser annealing | LA Wafer Laser Pulse | WLP
Products
Service
About Us
Contact Us
  • ADD: No.179 Kangqiang 3th Rd, Gaoxin District,Chengdu, Sichuan, PR China
  • Wafer Fabrication: 028-85222347
  • Packaging&Testing: 028-88556026
  • Precision Electronics: 0755-23699089
  • TEL: 028-88556028
  • After-Sales Phone: 028-88556025
  • After-Sales Mail: lastop-service@la-ap.com
  • Company Mail: lastop@la-ap.com
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Chengdu LasTop Tech Co.,Ltd蜀ICP备18037246号-1